Ion implanter and method for controlling the same
US6984833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2004 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Jun 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.