Programming method for nonvolatile memory cell
US6985386B1 · kind B1 · utility
15Cited by
4References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 8, 2004 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Jul 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a nonvolatile memory cell in which a ramped control voltage is used to obtain the desired voltage on the storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.