Hafnium silicide target and manufacturing method for preparation thereof
US6986834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2003 |
| Grant date | Jan 17, 2006 |
| Priority date | — |
| Expiry date | Oct 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a hafnium silicide target for forming a gate oxide film composed of HfSi0.82-0.98, wherein the oxygen content is 500 to 10000 ppm. Manufactured is a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSi0.82-0.98 is synthesized, pulverized to be 100 mesh or less, and thereafter subject to hot pressing or hot isostatic pressing (HIP) at 1700° C. to 2120° C. and 150 to 2000 kgf/cm2. Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion of powder dust during the manufacturing process thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.