High voltage ESD-protection structure

US6987300B2 · kind B2 · utility

Assignee

• MICROCHIP TECHNOLOGY INCORPORATED · US

Inventors

• Randy Yach · Phoenix, US
• Greg Dix · Tempe, US

Key dates

• Filing date: Mar 25, 2004
• Grant date: Jan 17, 2006
• Expiry date: Mar 25, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/711

Abstract

A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the input and/or output circuits. The ESD-protection structure is able to absorb high current from these ESD events without snapback that would compromise operation of the higher voltage inputs and/or outputs of the integrated circuit. The ESD-protection structure will conduct when an ESD event occurs at a voltage above a controlled breakdown voltage of an electronic device, e.g., diode, in the ESD protection structure. Conduction of current from an ESD event having a voltage above the electronic device controlled breakdown voltage may be through another electronic device, e.g., transistor, having high current conduction capabilities, in the ESD-protection structure that may be controlled (triggered) by the device (e.g., diode) determining the controlled breakdown voltage (at which the ESD voltage is clamped to a desired value). The high voltage ESD-protection structure may be…