Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
US6989202B2 · kind B2 · utility
10Cited by
19References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 14, 2004 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Jul 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.