SIMOX using controlled water vapor for oxygen implants

US6989315B2 · kind B2 · utility

Assignee

• Ibis Technology Corporation · US

Inventors

• Robert P. Dolan · Syracuse, US
• Bernhard F. Cordts, III · Ipswich, US
• Marvin Farley · Ipswich, US
• Geoffrey Ryding · Attleboro, US

Key dates

• Filing date: Jun 19, 2001
• Grant date: Jan 24, 2006
• Expiry date: Jun 19, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/3171
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.