Semiconductor device and method for manufacturing
US6989316B2 · kind B2 · utility
7Cited by
6References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2003 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Jul 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.