Strain-controlled III-nitride light emitting device
US6989555B2 · kind B2 · utility
26Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2004 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Apr 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.