Plasma treatment method and apparatus
US6991701B2 · kind B2 · utility
9Cited by
18References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2003 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jul 25, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.