Controlling resist profiles through substrate modification
US6991893B2 · kind B2 · utility
7Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jul 28, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.