Patent · US Expired

Controlling resist profiles through substrate modification

US6991893B2 · kind B2 · utility

7Cited by
7References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2002
Grant dateJan 31, 2006
Priority date
Expiry dateJul 28, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/095
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.