Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer

US6991998B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Stephen W. Bedell · Wappingers Falls, US
• Anthony G. Domenicucci · New Paltz, US
• Keith E. Fogel · Potsdam, US
• Effendi Leobandung · Stormville, US
• Devendra K. Sadana · Pleasantville, US

Key dates

• Filing date: Jul 2, 2004
• Grant date: Jan 31, 2006
• Expiry date: Jul 2, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02694
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor structure comprising a first strained semiconductor layer over an insulating layer is provided in which the first strained semiconductor layer is relatively thin (less than about 500 Å) and has a low defect density (stacking faults and threading defects). The method of the present invention begins with forming a stress-providing layer, such a SiGe alloy layer over a structure comprising a first semiconductor layer that is located atop an insulating layer. The stress-providing layer and the first semiconductor layer are then patterned into at least one island and thereafter the structure containing the at least one island is heated to a temperature that causes strain transfer from the stress-providing layer to the first semiconductor layer. After strain transfer, the stress-providing layer is removed from the structure to form a first strained semiconductor island layer directly atop said insulating layer.