Method of forming a fine pattern using a silicon-oxide-based film, semiconductor device with a silicon-oxide-based film and method of manufacture thereof
US6992013B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 20, 2000 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jun 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.