Method of fabricating semiconductor device
US6992020B2 · kind B2 · utility
0Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jul 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm3 or less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.