Ultra-linear multi-channel field effect transistor
US6992319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2002 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Jun 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semiconductor. The different kinds of semiconductors form heterojunctions to confine the electrons/holes in separate thin spikes layers. A number of spikes (3–10 nm thick) of different doped or 2-DEG/2-DHG concentrations in various channels can result in overall electron concentration gradient such as a 1/x3 electron/hole concentrations profile. Such an electron/hole concentration gradient can result in a linear variation of drain current with voltage to obtain a wide dynamic range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.