Semiconductor optical device with quantum dots having internal tensile or compressive strain
US6992320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2003 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor optical device having a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind made of a second semiconductor having a second lattice constant in bulk state smaller than the first lattice constant. The active layer may contain quantum dots of a second kind made of a third semiconductor having a third lattice constant in bulk state larger than the first lattice constant. The quantum dots of the first and second kinds are preferably disposed alternately along the thickness direction between the barrier layers having the first lattice constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.