Magnetic memory device having a non-volatile magnetic section and manufacturing thereof
US6992342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2003 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Sep 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic memory device, in which a tunnel magneto resistance element that establishes a connection between a write word line (first interconnection) and a bit line (second interconnection) is provided within a region in which the write word line and the bit line cross in a grade-separated manner. The magnetic memory device comprises a through hole that is provided in such a manner that is insulated from the write word line and also extending through the write word line so as to establish a connection between the tunnel magneto resistance element and a second landing pad (interconnection layer) lower than the write word line, and a contact that is formed in the through hole through a side wall barrier film so as to establish a connection between the tunnel magneto resistance element and the second landing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.