Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US6992359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Feb 26, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.