Method of fabricating a capacitor having sidewall spacer protecting the dielectric layer
US6993814B2 · kind B2 · utility
3Cited by
19References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2002 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor structure is fabricated by forming a bottom plate, forming a dielectric layer overlaying the bottom plate, and forming a top plate over the dielectric layer. In addition, at least one insulating sidewall spacer that protects the dielectric layer during processing is formed along the perimeter of the top plate and overlaying a portion of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.