Halogen gettering method for forming field effect transistor (FET) device
US6995064B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Mar 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermal oxidation method for forming a gate dielectric layer for use within a field effect transistor device employs a thermal oxidizing atmosphere comprising a halogen getter material. By employing the halogen getter material, the field effect transistor device is formed with enhanced performance, in particular with respect to negative bias temperature instability lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.