Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
US6995069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Oct 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film—are sequentially made on an Si substrate. The SBT film may comprise Bix, Sry, Ta2.0 and Oz, where the atomic ratio may be within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O—C2H5)3, Bi(O—iC3H7)3, Bi(O-tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2. 2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(TD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i-OC3H7)4THD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.