Surface treatment of copper to improve interconnect formation
US6995088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2004 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | May 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76861
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides, in one embodiment, a method of forming a copper layer (100) over a semiconductor substrate (105). The method comprises coating a copper seed layer (110) located over a semiconductor substrate with a protective agent (120) to form a protective layer (125). The method also includes placing the semiconductor substrate in an acid bath (145) to remove the protective layer. The method further includes electrochemically depositing a second copper layer (155) on the copper seed layer. Such methods and resulting conductive structures thereof may be advantageously used in methods to manufacture integrated circuits comprising copper interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.