Semiconductor device
US6995397B2 · kind B2 · utility
109Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2002 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Dec 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/605
Abstract
A semiconductor device having an accumulation channel SiC-MISFET structure includes a p-type SiC layer 10 formed on an SiC substrate, an n-type channel layer 20, a gate insulating film 11, a gate electrode 12, and n-type source and drain layers 13a and 13b. The channel layer 20 includes an undoped layer 22 and a δ doped layer 21 which is formed in the vicinity of the lower end of the undoped layer 22. Since the channel layer 20 includes the high-concentration δ doped layer 21 in its deeper portion, the electric field in the surface region of the channel layer is weakened, thereby allowing the current driving force to increase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.