Patent · US Expired

Memory device for storing electrical charge and method for fabricating the same

US6995416B2 · kind B2 · utility

10Cited by

5References

43Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans Reisinger · Grünwald, DE
Reinhard Stengl · Stadtbergen, DE
Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

Filing date	May 26, 2004
Grant date	Feb 7, 2006
Priority date	—
Expiry date	Jul 17, 2024

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/943
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention provides a memory device for storing electrical charge, which has, as memory elements, tube elements applied on an electrode layer and connect-connected thereto. The tube elements are provided with a dielectric coating, a filling material for filling the space between the tube elements being provided. A counter-electrode connected to the filling material is formed such that an electrical capacitor for storing electrical charge is formed between the electrode layer and the counter-electrode. The tube elements advantageously comprise carbon nanotubes, as a result of which the capacitance of the capacitor on account of a drastic increase in the area of the capacitor electrode surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.