Buried collar trench capacitor formed by LOCOS using self starved ALD nitride as an oxidation mask
US6995451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2003 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Dec 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.