High voltage integrated circuit including bipolar transistor within high voltage island area
US6995453B2 · kind B2 · utility
4Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Sep 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.