Semiconductor component

US6995467B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Herfurth · Gilching, DE
• Roland Rupp · Achern, DE
• Ilia Zverev · Birkenfeld, DE

Key dates

• Filing date: Nov 8, 2002
• Grant date: Feb 7, 2006
• Expiry date: Jun 18, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/30107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component contains two semiconductor bodies, which are spatially separated from one another and electrically interconnected. A compensation MOS field effect transistor is provided as the first semiconductor body, and a silicon carbide Schottky diode is provided as the second semiconductor body. Consequently, the semiconductor component can advantageously be produced significantly more compactly and more cost-effectively, since both the compensation MOS field-effect transistor and the silicon carbide Schottky diode contribute to a significant reduction of power loss.