Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application
US6998275B2 · kind B2 · utility
8Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Nov 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.