Method for creating barrier layers for copper diffusion
US6998343B1 · kind B1 · utility
9Cited by
17References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Nov 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.