Sey-Shing Sun
38Patents
12h-index
51Co-inventors
84Inventor score
Filing activity: Jul 19, 1988 → Nov 24, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6955937B1 | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell | Emerging Cross-Sectional Technologies | 83 | Expired |
| US5598059A | AC TFEL device having a white light emitting multilayer phosphor | Emerging Cross-Sectional Technologies | 57 | Expired |
| US6987059B1 | Method and structure for creating ultra low resistance damascene copper wiring | Electricity | 43 | Expired |
| US5309070A | AC TFEL device having blue light emitting thiogallate phosphor | Electricity | 37 | Expired |
| US4897319A | TFEL device having multiple layer insulators | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5505986A | Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices | Electricity | 33 | Expired |
| US5677594A | TFEL phosphor having metal overlayer | Electricity | 24 | Expired |
| US7365015B2 | Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material | Electricity | 18 | Expired |
| US5656888A | Oxygen-doped thiogallate phosphor | Chemistry; Metallurgy | 18 | Expired |
| US5939825A | Alternating current thin film electroluminescent device having blue light emitting alkaline earth phosphor | Chemistry; Metallurgy | 15 | Expired |
| US5581150A | TFEL device with injection layer | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7405116B2 | Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow | Electricity | 12 | Expired |
| US6169359A | Electroluminescent phosphor thin films with increased brightness that includes an alkali halide | Electricity | 12 | Expired |
| US6072198A | Electroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopants | Chemistry; Metallurgy | 11 | Expired |
| US6998343B1 | Method for creating barrier layers for copper diffusion | Electricity | 9 | Expired |
| US7300869B2 | Integrated barrier and seed layer for copper interconnect technology | Electricity | 8 | Expired |
| US7402770B2 | Nano structure electrode design | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7196420B1 | Method and structure for creating ultra low resistance damascene copper wiring | Electricity | 7 | Expired |
| US6242858A | Electroluminescent phosphor thin films | Chemistry; Metallurgy | 7 | Expired |
| US6043602A | Alternating current thin film electroluminescent device having blue light emitting alkaline earth phosphor | Chemistry; Metallurgy | 5 | Expired |
| US8552560B2 | Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6451460B1 | Thin film electroluminescent device | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7531442B2 | Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing | Electricity | 4 | Active |
| US7179736B2 | Method for fabricating planar semiconductor wafers | Electricity | 3 | Expired |
| US7205673B1 | Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.