Semiconductor device having capacitor and method of manufacturing the same
US6998663B2 · kind B2 · utility
4Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2004 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A semiconductor device, comprising a first wiring formed in a first insulating film, a second insulating film formed on the first insulating film, a first electrode film selectively formed on the second insulating film, a third insulating film formed on the first electrode film, and having an end portion and a central portion, wherein the end portion has a thickness thinner than the central portion, a second electrode film formed on the central portion of the third insulating film such that the second electrode film faces the first electrode film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.