Lateral low-side and high-side high-voltage devices

US6998681B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventor

• Xingbi Chen · Chengdu, CN

Key dates

• Filing date: Sep 28, 2004
• Grant date: Feb 14, 2006
• Expiry date: Sep 28, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/859

Abstract

Lateral high-side and low-side high-voltage devices with low specific on-resistances are made in a first and in a second surface voltage-sustaining region, respectively. In the on-state of high-side MOST (the right portion of the figure), the voltage across its source and its drain is very low and only layer 5 (p-type) is depleted to a large extent, layer 6 and layer 7 remain neutral and can serve as drift region(s) of electrons and/or holes. The drift region can be used for a single n-MOST or p-MOST, or even a parallel connection of n-MOST and p-MOST as shown in the figure. In the off-state of the high-side MOST, the voltage across its source and its drain is very large, but the voltage across its drain and the substrate 1 can be very low, and all of the layers in the first surface voltage-sustaining region are depleted, the depleted layer 5 produces an optimum variation lateral density of charge.The low-side MOST (the left portion of the figure) is similar to the high-side MOST.