Magnetic memory including a sense result category between logic states
US6999366B2 · kind B2 · utility
40Cited by
5References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2003 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Apr 11, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a magnetic memory. In one embodiment, the magnetic memory comprises an array of memory cells configured to provide resistive states, and a read circuit. The read circuit is configured to sense a resistance through a memory cell in the array of memory cells to obtain a sense result and categorize the sense result into one of at least three different categories comprising a middle category situated between the resistive states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.