Method for fabricating n-type carbon nanotube device
US7001805B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Jan 28, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate layer on a carbon nanotube device. Moreover, the inherently p-type carbon nanotube can be used to fabricate an n-type carbon nanotube device with reliable device characteristics and high manufacturing compatibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.