ZnO system semiconductor device
US7002179B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 4, 2004 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | May 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to provide ZnO system semiconductor devices having a stable p-type ZnO layer, a ZnO thin film is doped with nitrogen atoms having a high concentration. By fabricating the stable p-type ZnO layer, combinations with n-type ZnO layers easy of fabrication, or combinations with different compositions of p-type layers or n-type layers are made possible, thereby it enables to provide various configurations of ZnO system semiconductor devices.A ZnO system semiconductor device according to the present invention is characterized in that in a semiconductor device comprising one or more layers of n-type layer and p-type layers respectively, at least one layer of said p-type layers is (are) formed of the Zn-polar ZnO system semiconductor film doped with nitrogen atoms such that the thin film growth direction of said Zn-polar ZnO system semiconductor film is conformed to the direction of Zn polarity (0001).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.