Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit
US7002182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2003 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Jan 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A semiconductor light emitting device with improved luminous efficiency is provided. An underlying n-type GaN layer is grown on a sapphire substrate, and a growth mask made from SiO2 film or the like is formed on the underlying n-type GaN layer. An n-type GaN layer having a hexagonal pyramid shape is selectively grown on a portion, exposed from an opening of the growth mask, of the underlying n-type GaN layer. The growth mask is removed by etching, and then an active layer and a p-type GaN layer are sequentially grown on the entire substrate so as to cover the hexagonal pyramid shaped n-type GaN layer, to form a light emitting device. An n-side electrode and a p-side electrode are then formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.