Complementary bit resistance memory sensor and method of operation
US7002833B2 · kind B2 · utility
50Cited by
182References
32Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 14, 2004 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Jun 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus are disclosed for sensing the resistance state of a resistance-based memory element using complementary resistance-based elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.