Wafer table for local dry etching apparatus
US7005032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2002 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To resolve a problem that an etching rate profile is changed by a position of a nozzle relative to a semiconductor wafer and accordingly, at a vicinity of an outer edge of the semiconductor wafer, an accurate machining result is difficult to achieve, gas including activated species produced by plasma is blown from a nozzle locally to a surface of the semiconductor wafer W supported on a wafer table concentrically therewith to thereby remove unevenness on the surface of the semiconductor wafer. In this case, the wafer table is provided with a radius larger than a radius of the semiconductor wafer supported thereby by an outstretched portion to thereby prevent an outer edge from being removed excessively by reflected gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.