Method of forming suspended transmission line structures in back end of line processing
US7005371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2004 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Apr 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.