Radiation-emitting semiconductor component and method for making same

US7005681B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Stefan Bader · Fort Collins, US
• Viorel Georgel Dumitru · Vălenii de Munte, RO
• Volker Harle · Hemau, DE
• Bertram Kuhn · Stuttgart, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Jürgen Off · Regensburg, DE
• Ferdinand Scholz · Ulm, DE
• Heinz Schweizer · Heidenheim, DE

Key dates

• Filing date: Aug 30, 2002
• Grant date: Feb 28, 2006
• Expiry date: Aug 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.