Image sensor and method of fabricating the same
US7005689B2 · kind B2 · utility
15Cited by
4References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Sep 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/182
Abstract
Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are reduced. In addition, the image sensor includes a color-ratio control layer. The color ratio control layer controls color ratios between the sensitivities to blue, green and red. As a result, color distinction of the picture that is embodied by the image sensor can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.