Current sensing for power MOSFET operable in linear and saturated regions
US7005881B2 · kind B2 · utility
4Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 23, 2003 |
| Grant date | Feb 28, 2006 |
| Priority date | — |
| Expiry date | Dec 30, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R19/0092
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A circuit for sensing the current through a power MOSFET in both the linear and saturated regions of operation of the power MOSFET comprising a first circuit coupled to the power MOSFET for sensing the current through the power MOSFET in the saturated region of operation of the power MOSFET and a second circuit coupled to the power MOSFET for sensing the current through the MOSFET in the MOSFET's linear region of operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.