Method of manufacturing a photomask and method of manufacturing a semiconductor device using the photomask
US7008731B2 · kind B2 · utility
3Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2003 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Dec 31, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a photomask includes determining dimensions of a pattern in a photomask, determining an exposure latitude on the basis of the dimensions of the mask, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude. The pattern in the photomask includes dimensions of critical pattern portions in which an exposure latitude is low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.