Photomask pattern
US7008732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2003 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Feb 11, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.