Method for fabricating at least one mesa or ridge structure or at least one electrically pumped region in a layer or layer sequence

US7008810B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Christine Höss · Regensburg, DE
• Andreas Weimar · Regensburg, DE
• Andreas Leber · Regensburg, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Helmut Fischer · Calw, DE
• Volker Harle · Hemau, DE

Key dates

• Filing date: Mar 19, 2004
• Grant date: Mar 7, 2006
• Expiry date: Jul 31, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/951
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for definition of the mesa or ridge dimensions. The sacrificial layer (4) and of the layer or layer sequence are removed so that the mesa or ridge structure is formed in the layer or layer sequence. A part of the sacrificial layer (4) is selectively removed from the side areas thereof which have been uncovered in the previous step, so that a sacrificial layer remains which is narrower in comparison with a layer that has remained above the sacrificial layer as seen from the layer or layer sequence. A coating is applied at least to the sidewalls of the structure produced in the previous steps so that the side areas of the residual sacrificial layer are not completely overformed by the coating material. The sacrificial layer (4) is removed so that the layer that has remained above the sacrificial layer as seen from the layer or layer sequence is lifted off. A method is also disclosed for fabricating at least one gain-controlled laser diod…