Image display device using transistors each having a polycrystalline semiconductor layer
US7009205B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 7, 2003 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Jan 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.