Semiconductor light emitting device and method of fabricating the same
US7009216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2003 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Apr 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.