Semiconductor over-voltage protection structure for integrated circuit and for diode

US7009256B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventors

• Franz Dietz · Heilbronn, DE
• Michael Graf · Leutenbach, DE

Key dates

• Filing date: Sep 20, 2004
• Grant date: Mar 7, 2006
• Expiry date: Sep 28, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A monolithically integratable semiconductor structure serves for over-voltage protection in an integrated circuit or as a normal diode. The structure includes an insulating layer between a substrate and a semiconductor layer of first conductivity type, and several layers formed in the semiconductor layer. First and second layers of second conductivity type are spaced apart from one another. A third layer of first conductivity type contacts the second layer. A fourth layer of first conductivity type directly contacts and surrounds the second and third layers. A fifth layer of first conductivity type and higher dopant concentration than the semiconductor layer is disposed under the first layer. The first layer surrounds the second, third and fourth layers essentially in a ring-shape. A first electrode contacts the first layer. A second electrode contacts the second and third layers.