Indirect switching and sensing of phase change memory cells

US7009694B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mark Whitney Hart · San Jose, US
• Chung H. Lam · Williston, US
• Christie R. K. Marrian · Marbury, US
• Gary M. McClelland · Palo Alto, US
• Simone Raoux · New York, US
• Charles Thomas Rettner · San Jose, US
• Hemantha K. Wickramasinghe · Chappaqua, US

Key dates

• Filing date: May 28, 2004
• Grant date: Mar 7, 2006
• Expiry date: May 28, 2024

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2213/72
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.