Three-terminal magnetostatically coupled spin transfer-based MRAM cell
US7009877B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2003 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Feb 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device for reading and writing a data state comprises at least three terminals including first, second, and third terminals. The magnetic memory device also includes a spin transfer (ST) driven element, disposed between the first terminal and the second terminal, and a readout element, disposed between the second terminal and the third terminal. The ST driven element includes a first free layer, and a readout element includes a second free layer. A magnetization direction of the second free layer in the readout element indicates a data state. A magnetization reversal of the first free layer within the ST driven element magnetostatically causes a magnetization reversal of the second free layer in the readout element, thereby recording the data state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.