Method for producing defined polycrystalline silicon areas in an amorphous silicon layer

US7012026B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Walter Emili · Gomaringen, DE
• Herbert Goebel · Gräfelfing, DE
• Harald Wanka · Reutlingen, DE

Key dates

• Filing date: Jan 26, 2001
• Grant date: Mar 14, 2006
• Expiry date: Mar 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02532
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, in which a substrate is provided with an insulating layer and a layer of doped amorphous silicon, electromagnetic irradiation is performed using a laser source to produce the electrically conducting regions, and a shadow mask is positioned between the laser source and the substrate having the layer for definition of the contours of the electrically conducting regions.